PBYR2150CT

DISCRETE SEMICONDUCTORS DATA SHEET page M3D087 PBYR2150CT Schottky barrier double diode Preliminary specification 1996 Oct 14 Philips Semiconductors Preliminary specification Schottky barrier double diode FEATURES Low switching losses Low forward voltage High breakdown voltage Fast recovery time Guard ring protected Plastic SMD package. APPLICATIONS Low power, switched-mode power supplies Rectification Polarity protection. 1 2 3 1 PBYR2150CT DESCRIPTION The PBYR2150CT is a Schottky barrier double diode, fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package. 4 4 3 2 PINNING PIN 1 2 3 4 DESCRIPTION anode (a1) common cathode anode (a2) common cathode Top view MAM086 Marking code: BYR215. Fig.1 Simplified outline (SOT223), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR VRRM VRWM IF(AV) IFSM continuous reverse voltage repetitive peak reverse voltage crest working reverse voltage average forward current Tamb = 85 °C; Rth j-a = 70 K/W; note 1; VR(equiv) = 0.2 V; note 2 − − − − − 150 150 150 1 10 V V V A A PARAMETER CONDITIONS MIN. MAX. UNIT non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method 1996 Oct 14 2 Philips Semiconductors Preliminary specification Schottky barrier double diode PBYR2150CT SYMBOL Per diode Tstg Tj Tamb Notes PARAMETER CONDITIONS MIN. MAX. UNIT °C °C °C storage temperature junction te...