QSE214

PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) QSE214 R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) 0.100 (2.54) SCHEMATIC Collector NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter DESCRIPTION The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. FEATURES NPN Silicon Phototransistor Package Type: Sidelooker Medium Reception Angle, 50° Daylight Filter Black Epoxy Package Matching Emitter: QEE213 © 2002 Fairchild Semiconductor Corporation Page 1 of 4 7/23/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW QSE214 Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C unless otherwise specified) Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current VCE = 10 V, Ee...