PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122
PACKAGE DIMENSIONS
0.195 (4.95)
QSD123
QSD124
REFERENCE SURFACE
0.30...
PLASTIC SILICON INFRARED PHOTO
TRANSISTOR QSD122
PACKAGE DIMENSIONS
0.195 (4.95)
QSD123
QSD124
REFERENCE SURFACE
0.305 (7.75)
0.800 (20.3) MIN EMITTER
0.040 (1.02) NOM
COLLECTOR
SCHEMATIC
0.500 (1.25) 0.100 (2.54) NOM
COLLECTOR
0.240 (6.10) 0.215 (5.45)
NOTES:
0.020 (0.51) SQ. (2X)
1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
EMITTER
DESCRIPTION
The QSD122/123/124 is a photo
transistor encapsulated in an infrared transparent, black T-1 3/4 package.
FEATURES
NPN Silicon Photo
transistor Package Type: T-1 3/4 Notched Emitter: QED12X/QED22X/QED23X Narrow Reception Angle: 24°C Daylight Filter Package Material and Color: Black Epoxy High Sensitivity
2001 Fairchild Semiconductor Corporation DS300361 7/20/01
1 OF 4
www.fairchildsemi.com
PLASTIC SILICON INFRARED PHOTO
TRANSISTOR QSD122
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW
QSD123
QSD124
NOTE: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Solderin...