QS5U27

QS5U27 　　2.5V Drive Pch+SBD MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD -20V 340mΩ ±1.5A 1.25W lFeatures 1) The QS5U27 combines Pch MOSFET with a 　　Schottky barrier diode in a single TSMT5 　　package. 2) Low on-state resistance with fast swicthing 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lApplication Load switch, DC/ DC conversion lAbsolute maximum ratings (Ta = 25°C) lOutline TSMT5 　 　 　　　　　　 lInner circuit 　　　　　　 　 　 　 　　　　　　 lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking Embossed Tape 180 8 3000 TR U27 Parameter Drain - Source voltage Gate - Source voltage Continuous drain current Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation Junction temperature 　 Symbol VDSS VGSS ID ID, *1 pulse IS IS, *1 pulse PD*3 Tj 　 Value -20 ±12 ±1.5 ±6.0 -0.75 -3.0 0.9 150 　 Unit V V A A A A W/element ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/10 20130716 - Rev.001 　 　 QS5U27 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VRM VR IF IFSM*2 PD*3 Tj Value 25 20 1....