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PBYR1640X Dataheets PDF



Part Number PBYR1640X
Manufacturers NXP
Logo NXP
Description Rectifier diodes Schottky barrier
Datasheet PBYR1640X DatasheetPBYR1640X Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab PBYR1645F, PBYR1645X SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V k 1 a 2 IF(AV) = 16 A VF ≤ 0.6 V GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency .

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab PBYR1645F, PBYR1645X SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V k 1 a 2 IF(AV) = 16 A VF ≤ 0.6 V GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1645F is supplied in the SOD100 package. The PBYR1645X is supplied in the SOD113 package. PINNING PIN 1 2 tab DESCRIPTION cathode anode isolated SOD100 case SOD113 case 1 2 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR16 PBYR16 VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature Ths ≤ 97 ˚C square wave; δ = 0.5; Ths ≤ 95 ˚C square wave; δ = 0.5; Ths ≤ 95 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 40F 40X 40 40 40 16 32 120 132 1 150 175 MAX. 45F 45X 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg July 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from both terminals to external heatsink CONDITIONS PBYR1645F, PBYR1645X MIN. - TYP. MAX. UNIT 1500 V SOD100 package; R.H. ≤ 65%; clean and dustfree Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree Capacitance from pin 1 to external heatsink f = 1 MHz - - 2500 V Cisol - 10 - pF THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air MIN. TYP. MAX. UNIT 55 4.2 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 16 A; Tj = 125˚C IF = 16 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.53 0.55 0.2 27 470 0.6 0.68 1.7 40 V V mA mA pF July 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR1645F, PBYR1645X 20 Forward dissipation, PF (W) Vo = 0.37 V Rs = 0.014 Ohms PBYR1645X Ths(max) (C) 66 D = 1.0 100 Reverse current, IR (mA) 125 C PBYR1645 15 0.5 10 0.2 0.1 I tp D= tp T t 87 10 100 C 75 C 108 1 50 C 5 T 129 0.1 Tj = 25 C 0 0 5 10 15 20 Average forward current, IF(AV) (A) 150 25 0.01 0 25 Reverse voltage, VR (V) 50 Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 15 Forward dissipation, PF (W) Vo = 0.37 V Rs = 0.014 Ohms PBYR1645X Ths(max) (C) a = 1.57 87 Cd / pF 10000 PBYR1645 2.8 10 4 2.2 1.9 108 1000 5 129 0 0 5 10 Average forward current, IF(AV) (A) 150 15 100 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Forward current, IF (A) Tj = 25 C Tj = 125 C 40 PBYR1645 Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. 50 10 Transient thermal impedance, Zth j-hs (K/W) 1 30 typ max 10 T 20 0.1 P D tp D= tp T t 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR1645 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance; Zth j-hs = f(tp). July 1998 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g PBYR1645F, PBYR1645X 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 M a 0.9 0.7 0.55 max 1.3 5.08 top view Fig.7. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g 3.2 3.0 10.3 max PBYR1645F, PBYR1645X 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. .


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