Document
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab
PBYR1645F, PBYR1645X
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V
k 1
a 2
IF(AV) = 16 A VF ≤ 0.6 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1645F is supplied in the SOD100 package. The PBYR1645X is supplied in the SOD113 package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode isolated
SOD100
case
SOD113
case
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR16 PBYR16 VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature Ths ≤ 97 ˚C square wave; δ = 0.5; Ths ≤ 95 ˚C square wave; δ = 0.5; Ths ≤ 95 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 40F 40X 40 40 40 16 32 120 132 1 150 175 MAX. 45F 45X 45 45 45 UNIT
V V V A A A A A ˚C ˚C
IRRM Tj Tstg
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from both terminals to external heatsink CONDITIONS
PBYR1645F, PBYR1645X
MIN. -
TYP. MAX. UNIT 1500 V
SOD100 package; R.H. ≤ 65%; clean and dustfree
Visol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree Capacitance from pin 1 to external heatsink f = 1 MHz
-
-
2500
V
Cisol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air MIN. TYP. MAX. UNIT 55 4.2 K/W K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 16 A; Tj = 125˚C IF = 16 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.53 0.55 0.2 27 470 0.6 0.68 1.7 40 V V mA mA pF
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR1645F, PBYR1645X
20
Forward dissipation, PF (W) Vo = 0.37 V Rs = 0.014 Ohms
PBYR1645X
Ths(max) (C) 66 D = 1.0
100
Reverse current, IR (mA) 125 C
PBYR1645
15 0.5 10 0.2 0.1
I tp D= tp T t
87
10 100 C 75 C
108
1 50 C
5
T
129
0.1 Tj = 25 C
0
0
5
10 15 20 Average forward current, IF(AV) (A)
150 25
0.01 0 25 Reverse voltage, VR (V) 50
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
15
Forward dissipation, PF (W) Vo = 0.37 V Rs = 0.014 Ohms
PBYR1645X
Ths(max) (C) a = 1.57
87
Cd / pF 10000
PBYR1645
2.8 10 4
2.2
1.9
108
1000
5
129
0
0
5 10 Average forward current, IF(AV) (A)
150 15
100 1
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
Forward current, IF (A) Tj = 25 C Tj = 125 C 40 PBYR1645
Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
50
10
Transient thermal impedance, Zth j-hs (K/W)
1
30 typ max 10
T
20
0.1
P D tp D= tp T t
0
0.01
0
0.2
0.4
0.6 0.8 1 Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR1645
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-hs = f(tp).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
PBYR1645F, PBYR1645X
10.2 max 5.7 max 3.2 3.0
0.9 0.5
4.4 max 2.9 max 4.4 4.0
7.9 7.5 17 max
seating plane
3.5 max not tinned
4.4
13.5 min
k
0.4 M
a
0.9 0.7 0.55 max 1.3
5.08 top view
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3.2 3.0 10.3 max
PBYR1645F, PBYR1645X
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 15.8 19 max. max. seating plane 15.8 max
3 max. .