MITSUBISHI TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
QM5HG-24
• • • •
IC Collector c...
MITSUBISHI
TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
QM5HG-24
IC Collector current ............................ 5A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain................................. 5 Non-Insulated Type
APPLICATION Base driver for High voltage
transistor modules
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
15.6 13.6 12.6
2 1
4.5 1.5 C
9.6
5
5 20
B
2
2
E
4
0.7
20
2 1.8 4.4 B C E 0.6 2.8 1
5.45 5.45
Feb.1999
MITSUBISHI
TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX VCBO VEBO IC PC IB Tj Tstg — — Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector dissipation Base current Junction temperature Storage temperature Mounting torque Weight
(Tj=25°C, unless otherwise noted)
Conditions VEB=2V Emitter open Collector open DC TC=25°C DC Ratings 1200 1200 7 5.0 100 2 –40~+150 –40~+125 Mounting screw M3 Typical value 0.59~0.98 6~10 5 Unit V V V A W A °C °C N·m kg·cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
(Tj=25°C, unless otherwise note...