Document
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
PBYL3025CT, PBYL3025CTB series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V IO(AV) = 30 A VF ≤ 0.43 V
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL3025CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL3025CTB series is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYL30 PBYL30 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 123 ˚C square wave; δ = 0.5; Tmb ≤ 123 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 20CT 20CTB 20 20 20 30 30 135 150 1 150 175 25CT 25CTB 25 25 25 UNIT
V V V A A A A A ˚C ˚C
IRRM Tj Tstg
1. It is not possible to make connection to pin 2 of the SOT404 package.
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PBYL3025CT, PBYL3025CTB series
MIN. -
TYP. MAX. UNIT 60 50 2 1.5 K/W K/W K/W K/W
per diode both diodes SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A; Tj = 125˚C IF = 30 A; Tj = 125˚C IF = 30 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.35 0.38 0.52 0.6 1 22 700 0.43 0.46 0.6 0.67 5 40 V V V V mA mA pF
IR Cd
Reverse current Junction capacitance
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYL3025CT, PBYL3025CTB series
12 10 8
Forward dissipation, PF (W)
Vo = 0.32 V Rs = 0.009 Ohms
PBYL3025CT
Tmb(max) / C D = 1.0
126 130 134
1A
IR / A Tj = 150 C
PBYR2025CT
0.5 0.2 0.1
100mA 125 10mA 100 75 50 100uA 25
6 4 2
T t I tp
138
1mA
D= tp 142 T
146 150 25
0
0
5
10 15 20 Average forward current, IF(AV) (A)
10uA
0
5
10 VR / V
15
20
25
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D.
Forward dissipation, PF (W)
Vo = 0.32 V Rs = 0.009 Ohms
Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
10 8
PBYL3025CT
Tmb(max) / C a = 1.57
130 134
10000
Cd / pF
PBYR2025CT
2.2 2.8 4
1.9
6 4 2 0
138
1000
142 146 150 15
0
5 10 Average forward current, IF(AV) (A)
100
1
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
PBYR2025CT typ Tj = 25 C Tj = 125 C max
Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
30 25 20 15 10
IF / A
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
P D
tp
D=
tp T t
5 0
0.001 1us
T
0
0.2
0.4 VF / V
0.6
0.8
1
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL3025CT
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp).
March 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
PBYL3025CT, PBYL3025CTB series
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.7. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8".
March 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 1.4 g
10.3 max
PBYL3025CT, PBYL3025CTB series
4.5 max 1.4 max
11 max 15.4
2.5 0.85 max (x2) 2.54 (x2)
0.5
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5 2.0
3.8
5.08
Fig.9. SOT404 : soldering patt.