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QM30TB-24B

Mitsubishi Electric Semiconductor

Transistor Module

MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24B • • • • • IC Collector...


Mitsubishi Electric Semiconductor

QM30TB-24B

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MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24B IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 127 7.5 19 21 28.5 7.5 21 28.5 7.5 16.5 21.5 2–φ5.5 P BuP EuP U 18 40 56 BuP EuP P 25 BvP EvP BwP EwP BvP EvP V BvN EvN BwP EwP W BwN EwN U N BuN EuN V W BuN EuN N BvN EvN 98 110±0.2 BwN EwN Tab#250, t=0.8 Tab#110, t=0.5 26.5 Note: All Transistor Units are 4-Stage Darlingtons. 7.5 LABEL 17.5 25.6 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 ...




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