QM30HQ-24

MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain................................. 5 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 70 60 2–φ 5.5 C 0.8 B C 27 E (16.5) B E φ1.3 Tab # 187, t=0.5 7.5 15 6 15 4.75 6.35 2.5 15 3.2 LABEL 23.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC PC IB Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector dissipation Base current Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC TC=25°C DC Ratings 1200 1200 1200 7 30 310 6 –40~+150 –40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 90 Unit V V V V A W A °C °C V N·m kg·cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) hFE ton ts tf Rth (j-c) Q Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Pa...