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PBYL2525CTB

NXP

Rectifier diodes Schottky barrier

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast...


NXP

PBYL2525CTB

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance PBYL2525CT, PBYL2525CTB series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V IO(AV) = 25 A VF ≤ 0.43 V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2525CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL2525CTB series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab gate drain 1 source DESCRIPTION SOT78 (TO220AB) tab SOT404 tab 2 drain 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYL25 PBYL25 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 119 ˚C square wave; δ = 0.5; Tmb ≤ 119 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 20CT 20CTB 2...




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