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QM15TD-HB

Mitsubishi Electric Semiconductor

MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES QM15TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TD-HB • • • • • IC Collector c...


Mitsubishi Electric Semiconductor

QM15TD-HB

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MITSUBISHI TRANSISTOR MODULES QM15TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TD-HB IC Collector current .......................... 15A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 24.5 12 7 15 7 15 7 11 25.5 25.5 BuP EuP BvP EvP BwP EwP 2–φ5.5 P 18 28 45 U N V W P BuP EuP u BuN EuN Tab#100, t=0.5 N BvP EvP v BvN EvN BwP EwP w BwN EwN BuN EuN BuN EvN BwN EwN 76 93 105 Tab#250, t=0.8 (22.45) 7 LABEL 13 Note: All Transistor Units are Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 15 15 75 1 150 –40~+150 –40~+125 Ch...




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