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QM15 Dataheets PDF



Part Number QM15
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description MEDIUM POWER SWITCHING USE INSULATED TYPE
Datasheet QM15 DatasheetQM15 Datasheet (PDF)

MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15HA-H • • • • • IC Collector current . 15A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3.7 7.0 24.0 E 6.35 16.6 19.5 .

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MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15HA-H • • • • • IC Collector current .......................... 15A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3.7 7.0 24.0 E 6.35 16.6 19.5 30.2 39.0 4.75 B E φ1.7 φ2.4 φ1.7 A φ2.4 7.0 7.0 φ1.3 φ2.0 B 24.0 4.2 0.8 0.8 0.5 0.4 φ4.2 C C B 6.35 4.75 LABEL Fig. A Fig. B 3.2 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 15 15 100 0.9 150 –40~+150 –40~+125 Charged part to case, AC for 1 minute Mounting screw M4 Typical value 2500 0.98~1.47 10~15 25 Unit V V V V A A W A A °C °C V N·m kg·cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25°C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=0.3A –IC=15A (diode forward voltage) IC=15A, VCE=2V/5V Min. — — — — — — 50/100 — VCC=300V, IC=15A, IB1=–IB2=0.3A — — Transistor part Diode part Conductive grease applied — — — Typ. — — — — — — — — — — — — — Max. 1.0 1.0 80 2.0 2.5 1.5 — 1.5 8.0 2.0 1.2 2.5 0.4 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 25 IB=0.4A 10 3 7 5 4 3 2 VCE=2.0V 10 2 7 5 4 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25°C Tj=125°C VCE=5.0V COLLECTOR CURRENT IC (A) 20 Tj=25°C IB=0.1A IB=0.06A 15 10 IB=0.02A 5 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) DC CURRENT GAIN hFE IB=0.2A COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 1.2 1.6 2.0 2.4 2.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 Tj=25°C Tj=125°C IB=0.3A VBE(sat) BASE CURRENT IB (A) VCE=2.0V Tj=25°C SATURATION VOLTAGE 10 0 7 5 4 VCE(sat) 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 3.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj=25°C Tj=125°C 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 4 3 IC=5A 2 IC=10A IC=15A SWITCHING TIME 10 1 7 5 4 3 2 ts tf 1 0 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 ton 7 5 4 3 2 10 0 2 3 4 5 7 10 1 VCC=300V IB1=–IB2=0.3A Tj=25°C Tj=125°C 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 40 ts 10 1 7 5 4 3 2 10 0 7 5 4 3 COLLECTOR CURRENT IC (A) ts, tf (µs) 30 IB2=–0.5A –1A Tj=125°C SWITCHING TIME tf 20 VCC=300V IB1=0.3A IC=15A Tj=25°C Tj=125°C 3 4 5 7 10 –1 2 3 4 5 7 10 0 2 3 10 0 0 200 400 600 800 BASE REVERSE CURRENT –IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) tw 1m =1 s 0m s 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 0µ s s 50 0µ 10 0 7 5 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 TC=25°C NON-REPETITIVE COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT –IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.6 1.4 1.2 DC 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (°C) Zth (j–c) (°C/ W) 1.0 0.8 0.6 0.4 0.2 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE F.


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