Document
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15HA-H
• • • • •
IC Collector current .......................... 15A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
3.7 7.0
24.0
E
6.35
16.6 19.5 30.2 39.0
4.75
B E
φ1.7 φ2.4 φ1.7 A φ2.4
7.0
7.0
φ1.3 φ2.0 B
24.0
4.2
0.8 0.8 0.5
0.4
φ4.2
C
C
B
6.35
4.75
LABEL
Fig. A
Fig. B
3.2
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 15 15 100 0.9 150 –40~+150 –40~+125 Charged part to case, AC for 1 minute Mounting screw M4 Typical value 2500 0.98~1.47 10~15 25 Unit V V V V A A W A A °C °C V N·m kg·cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=0.3A –IC=15A (diode forward voltage) IC=15A, VCE=2V/5V Min. — — — — — — 50/100 — VCC=300V, IC=15A, IB1=–IB2=0.3A — — Transistor part Diode part Conductive grease applied — — — Typ. — — — — — — — — — — — — — Max. 1.0 1.0 80 2.0 2.5 1.5 — 1.5 8.0 2.0 1.2 2.5 0.4 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
25 IB=0.4A 10 3 7 5 4 3 2 VCE=2.0V 10 2 7 5 4 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
Tj=25°C Tj=125°C VCE=5.0V
COLLECTOR CURRENT IC (A)
20
Tj=25°C IB=0.1A IB=0.06A
15
10
IB=0.02A
5
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
DC CURRENT GAIN hFE
IB=0.2A
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 1.2 1.6 2.0 2.4 2.8
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 Tj=25°C Tj=125°C IB=0.3A VBE(sat)
BASE CURRENT IB (A)
VCE=2.0V Tj=25°C
SATURATION VOLTAGE
10 0 7 5 4 VCE(sat) 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
3.2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 Tj=25°C Tj=125°C 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (µs)
4
3 IC=5A 2 IC=10A IC=15A
SWITCHING TIME
10 1 7 5 4 3 2
ts tf
1
0
7 10 –2
2 3 4 5 7 10 –1
2 3 4 5 7
10 0 ton 7 5 4 3 2 10 0 2 3 4 5 7 10 1
VCC=300V IB1=–IB2=0.3A Tj=25°C Tj=125°C 2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 2
REVERSE BIAS SAFE OPERATING AREA
40
ts 10 1 7 5 4 3 2 10 0 7 5 4 3
COLLECTOR CURRENT IC (A)
ts, tf (µs)
30
IB2=–0.5A –1A Tj=125°C
SWITCHING TIME
tf
20
VCC=300V IB1=0.3A IC=15A Tj=25°C Tj=125°C 3 4 5 7 10 –1 2 3 4 5 7 10 0 2 3
10
0
0
200
400
600
800
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 5 3 2 10 1 7 5 3 2 100 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
DERATING FACTOR (%)
tw 1m =1 s 0m s
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
10 0µ s s 50 0µ
10 0 7 5 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
TC=25°C NON-REPETITIVE
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT –IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.6
1.4 1.2
DC
80 100 120 140 160
VCE (V)
CASE TEMPERATURE
TC (°C)
Zth (j–c) (°C/ W)
1.0 0.8 0.6 0.4 0.2 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0
10 2 7 5 4 3 2 10 1 7 5 4 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE F.