MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
QM100HC-M
• • • •
IC Collector c...
MITSUBISHI
TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
QM100HC-M
IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 100 Non-Insulated Type
APPLICATION Robotics, Forklifts, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5 43.3 33 8 8 C
5.3
4.5 4.5
B
36.5
14
B E
φ5.3 10.5 M5
R6
E
23.5
4.5
LABEL
22
Feb.1999
MITSUBISHI
TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 100 100 420 3 1000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 — 1.47~1.96 15~20 1.47~1.96 15~20 90 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
—
Mounting torque Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth...