PBSS5350T

DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2002 Aug 08 2004 Jan 13 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor FEATURES Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat High collector current capability High collector current gain Improved efficiency due to reduced heat generation. APPLICATIONS Power management applications Low and medium power DC/DC convertors Supply line switching Battery chargers Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T. MARKING TYPE NUMBER PBSS5350T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPENUMBER NAME PBSS5350T − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) ZD* Top view handbook, halfpage PBSS5350T QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. −50 −2 −3 135 UNIT V A A mΩ 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 2004 Jan 13 2 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute...