PBSS5140U

DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation Enhanced performance over SOT23 1A standard packaged transistor. APPLICATIONS General purpose switching and muting LCD back lighting Supply line switching circuits Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCEsat transistor in a SOT323 (SC-70) plastic package. MARKING 1 2 PBSS5140U QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. −40 −2 <500 UNIT V A mΩ handbook, halfpage 3 3 1 2 TYPE NUMBER PBSS5140U MARKING CODE 51t Fig.1 Top view MAM048 Simplified outline (SOT323; SC-70) and symbol. 2001 Jul 20 2 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junc...