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QED121

QT Optoelectronics

PLASTIC INFRARED LIGHT EMITTING DIODE

QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 (4.95) FEATURES • != 880 nm REFERENCE SUR...


QT Optoelectronics

QED121

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QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 (4.95) FEATURES != 880 nm REFERENCE SURFACE 0.305 (7.75) Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched Photosensor: QSD122/123/124 0.040 (1.02) NOM 0.800 (20.3) MIN Narrow Emission Angle, 18° High Output Power Package material and color: Clear, peach tinted, plastic 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) NOTES: 1. Derate power dissipation linearly 2.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. SCHEMATIC ANODE 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. CATHODE ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD (TA =25°C) MIN TYP MAX UNITS Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 200 Unit °C °C °C °C mA V mW ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QED121 Radiant Intensity QED122 Radiant Intensity QED1...




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