PBSS2515VS

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product specification Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor FEATURES 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Low collector-emitter saturation voltage High current capability Improved thermal behaviour due to flat lead Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area Reduces required PCB area Reduced pick and place costs. APPLICATIONS General purpose switching and muting Low frequency driver circuits LCD backlighting Audio frequency general purpose amplifier applications Battery driven equipment (mobile phones, video cameras and hand-held devices). handbook, halfpage 6 PBSS2515VS QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 15 1 <500 UNIT V A mΩ 5 4 6 5 4 TR2 TR1 DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. MARKING TYPE NUMBER PBSS2515VS MARKING CODE N9 Fig.1 Simplified outline (SOT666) and symbol. 1 Top view 2 3 MAM447 1 2 3 2001 Nov 07 2 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor LI...