Document
RD65FV
RD65FV
Rectifier Diode Target Information
Replaces November 2000, version DS5408-1.1 DS5408-2.0 October 2001
FEATURES
s s s
KEY PARAMETERS VRRM IF(AV) IFSM (max) (max) 600V 11745A 162000A
Optimised For High Current Rectifiers High Surge Capability Very Low On-state Voltage
APPLICATIONS
s s s
Electroplating Power Supplies Welding
VOLTAGE RATINGS
Part and Ordering Repetitive Peak Number Reverse Voltage VRRM V RD65FV06 RD65FV05 RD65FV04 RD65FV03 RD65FV02 RD65FV01 600 500 400 300 200 100 Conditions
VRSM = VRRM Outline type code: V (See Package Details for further information) Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: RD65FV04 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
1/7
www.dynexsemi.com
RD65FV
CURRENT RATINGS
Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 11745 18450 16974 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 7632 11988 10079 A A A
Tcase = 85oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 11120 17500 16000 A A A Parameter Test Conditions Max. Units
Single Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 7200 11300 9450 A A A
2/7
www.dynexsemi.com
RD65FV
SURGE RATINGS
Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Test Conditions 10ms half sine, Tcase = 175˚C VR = 50% VRRM - 1/4 sine 10ms half sine, Tcase = 175˚C VR = 0 Max. 130 84.5 x 106 162 132 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 43.0kN Double side Min. –55 38.7 Max. 0.0075 0.015 0.015 0.002 0.004 225 200 200 47.3 Units ˚CW ˚CW ˚CW ˚CW ˚CW ˚C ˚C ˚C kN
(with mounting compound) Single side Tvj Virtual junction temperature Forward (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force
CHARACTERISTICS
Symbol IRM Irr QS VTO rT Parameter Peak reverse current Peak reverse recovery current Total stored charge Threshold voltage Slope resistance Test Conditions At VRRM, Tcase = 200˚C IF = 2000A, dIRR/dt = 3A/µs, Tcase = 200˚C, VR = 100V At Tvj = 200˚C At Tvj = 200˚C Min. Max. 150 230 39 0.6 0.0225 Units mA A µC V mΩ
3/7
www.dynexsemi.com
RD65FV
CURVES
8000 Tj = 200˚C 7000
14000 12000 16000 dc 1/2 wave 3 phase 6 phase
Instantaneous forward current, IF - (A)
5000 4000 3000 2000 1000 0 0.5
Mean power dissipation - (W)
6000
10000 8000 6000 4000 2000 0
0.55 0.6 0.65 0.7 0.75 Instantaneous forward voltage, VF - (V)
0.8
0
2000
4000
6000
8000
10000
12000
14000
Mean forward current, IF(AV) - (A)
Fig. 2 Maximum (limit) forward characteristics
Fig. 3 Power dissipation
10000 IF QS
Stored charge QS - (µC)
1000 Conditions: Tj = 200˚C VR = 100V IF = 2000A Max. IRR 100
Reverse recovery current IRR - (A)
dI/dt IRM 1000
Max. QS
100 0.1
1.0
10
10 100
Rate of decay of forward current dI/dt - (A/µs)
Fig. 4 Maximum stored charge and reverse recovery current vs dI/dt
4/7
www.dynexsemi.com
RD65FV
280 I2t = Î2 x t 2
Peak half sine forward current - (kA)
0.1
240
100
Anode side cooled Thermal impedance - ˚C/W
200
80
I2t value - (A2s x 106)
0.01 Double side cooled
160
60
120
40
0.001
80
20
Conduction Effective thermal resistance Junction to case ˚C/W Double side Anode side 0.0075 0.015 d.c. 0.0085 0.016 Halfwave 0.0092 0.0167 3 phase 120˚ 0.0120 0.0194 6 phase 60˚ 0.01 0.1 1.0 Time - (s) 10 100
40 1 ms 10 1 2 3 5 10 20 50 Cycles at 50Hz Duration
0.0001 0.001
Fig. 5 Surge (non-repetitive) forward current vs time (with 50% VRRM @ Tcase = 175˚C)
Fig. 6 Maximum (limit) transient thermal impedance
5/7
www.dynexsemi.com
RD65FV
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode Ø112.5 max Ø73 nom
Ø73 nom
Anode
Nominal weight: 1100g Clamping force: 43kN ±10%
Package outine type code: V
Note: 1. Package maybe supplied with pins and/or tags.
6/7
27.0 25.4
www.dynexsemi.com
RD65FV
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has devel.