RBV600D

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.80 grams ( Approximaly ) RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 20 ± 0.3 + ~~ 11 ± 0.2 17.5 ± 0.5 13.5 ± 0.3 1.0 ± 0.1 10 7.5 7.5 ± 0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 6.0 A Maximum DC Reverse Current Ta = 25 °C at Rated ...