Document
Diodes
Shottky barrier diode
RB500V-40
zApplication Low current rectification
zFeatures 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability.
zExternal dimensions (Unit : mm)
1.25±0.1
0.1±0.1 0.05
zConstruction Silicon epitaxial planar
0.3±0.05
ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A
dot (year week factory)
0.7±0.2 0.1
zTaping dimensions (Unit : mm)
1.7±0.1 2.5±0.2
0.8MIN. 2.1
RB500V-40
zLead size figure (Unit : mm)
0.9MIN.
UMD2
zStructure
zAbsolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
VF
-
Reverse current
IR
-
Capacitance between terminals
Ct
-
Limits
Unit
45
V
40
V
100
mA
1
A
125
℃
-40 to +125
℃
Typ. Max.
- 0.45
-
1
6.0
-
Unit
Conditions
V
IF=10mA
µA
VR=10V
pF
VR=10V , f=1MHz
Rev.B
1/3
Diodes
zElectrical characteristic curves (Ta=25°C)
FORWARD CURRENT:IF(mA) IF(mA)
100 Ta=125℃
10 Ta=75℃
1
0.1
Ta=25℃ Ta=-25℃
0.01 0 100 200 300 400 500 600 700 800 VF(mV)
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
REVERSE CURRENT:IR(nA) IR(uA)
100
Ta=125℃
10
Ta=75℃
1 Ta=25℃
0.1 Ta=-25℃
0.01
0.001 0
10 VR(V) 20
30
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
400
Ta=25℃
390
IF=10mA n=30pcs
380
370
360 AVE:370.2mV
350
VF DISPERSION MAP
REVERSE CURRENT:IR(nA)
1000 900 800 700 600 500 400 300 200 100 0
Ta=25℃ VR=10V n=30pcs
AVE:88.62nA
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct(pF)
RB500V-40
100 f=1MHz
10
1
0
10
20
30
VR(V)
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
20
18
Ta=25℃
16
f=1MHz
14
VR=10V n=10pcs
12
10
8
6
4
2
AVE:5.81pF
0
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10
5 AVE:5.5A
0
IFSM DISRESION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm(A)
15
15
Ifsm
8.3ms 8.3ms
10
1cyc
10
5
5
Ifsm t
0
0.1
1 cycle 10
100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
0
0.1
1 t(ms) 10
100
TIME:t(ms) IFSM-t CHARACTERISTICS
1000
Rth(j-a)
100
10
1 0.001
Rth(j-c)
Mounted on epoxy board
IM=10mA
IF=100mA
1ms time 300us
0.1
10
1000
TIME:t(s) Rth-t CHARACTERISTICS
FORWARD POWER DISSIPATION:Pf(W)
0.1
DC
0.08
D=1/2
0.06
Sin(θ=180) 0.04
0.02
REVERSE POWER DISSIPATION:PR (W)
0.003
0.002 0.001
D=1/2 DC
Sin(θ=180)
0
0
0.1
0.2
AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
0
0
10
20
30
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Rev.B
2/3
Diodes
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.3
0.25
0.2
DC
0.15 D=1/2
0.1
0A
Io
0V t
VR D=t/T
VR=15V
T Tj=125℃
0.05 Sin(θ=180)
0
0
25
50
75 100 125
AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
0.3
0A
0.25
0V
0.2 DC
0.15 D=1/2 0.1 Sin(θ=180)
0.05
Io
VR t
D=t/T VR=15V T Tj=125℃
0
0
25 50 75 100 125
CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc)
RB500V-40
Rev.B
3/3
Notice
Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ CLASSⅣ
CLASSⅢ
CLASSⅡb CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to .