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RB500V-40 Dataheets PDF



Part Number RB500V-40
Manufacturers Rohm
Logo Rohm
Description Schottky barrier diode
Datasheet RB500V-40 DatasheetRB500V-40 Datasheet (PDF)

Diodes Shottky barrier diode RB500V-40 zApplication Low current rectification zFeatures 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. zExternal dimensions (Unit : mm) 1.25±0.1 0.1±0.1   0.05 zConstruction Silicon epitaxial planar 0.3±0.05 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) 0.7±0.2   0.1 zTaping dimensions (Unit : mm) 1.7±0.1 2.5±0.2 0.8MIN. 2.1 RB500V-40 zLead size figure (Unit : mm) 0.9MIN. UMD2 zStructure zAbsolute maximum ratings (.

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Diodes Shottky barrier diode RB500V-40 zApplication Low current rectification zFeatures 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. zExternal dimensions (Unit : mm) 1.25±0.1 0.1±0.1   0.05 zConstruction Silicon epitaxial planar 0.3±0.05 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) 0.7±0.2   0.1 zTaping dimensions (Unit : mm) 1.7±0.1 2.5±0.2 0.8MIN. 2.1 RB500V-40 zLead size figure (Unit : mm) 0.9MIN. UMD2 zStructure zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Forward voltage VF - Reverse current IR - Capacitance between terminals Ct - Limits Unit 45 V 40 V 100 mA 1 A 125 ℃ -40 to +125 ℃ Typ. Max. - 0.45 - 1 6.0 - Unit Conditions V IF=10mA µA VR=10V pF VR=10V , f=1MHz Rev.B 1/3 Diodes zElectrical characteristic curves (Ta=25°C) FORWARD CURRENT:IF(mA) IF(mA) 100 Ta=125℃ 10 Ta=75℃ 1 0.1 Ta=25℃ Ta=-25℃ 0.01 0 100 200 300 400 500 600 700 800 VF(mV) FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT:IR(nA) IR(uA) 100 Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0 10 VR(V) 20 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) 400 Ta=25℃ 390 IF=10mA n=30pcs 380 370 360 AVE:370.2mV 350 VF DISPERSION MAP REVERSE CURRENT:IR(nA) 1000 900 800 700 600 500 400 300 200 100 0 Ta=25℃ VR=10V n=30pcs AVE:88.62nA IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct(pF) RB500V-40 100 f=1MHz 10 1 0 10 20 30 VR(V) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 18 Ta=25℃ 16 f=1MHz 14 VR=10V n=10pcs 12 10 8 6 4 2 AVE:5.81pF 0 Ct DISPERSION MAP 20 Ifsm 1cyc 15 8.3ms 10 5 AVE:5.5A 0 IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm(A) 15 15 Ifsm 8.3ms 8.3ms 10 1cyc 10 5 5 Ifsm t 0 0.1 1 cycle 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 0.1 1 t(ms) 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1000 Rth(j-a) 100 10 1 0.001 Rth(j-c) Mounted on epoxy board IM=10mA IF=100mA 1ms time 300us 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS FORWARD POWER DISSIPATION:Pf(W) 0.1 DC 0.08 D=1/2 0.06 Sin(θ=180) 0.04 0.02 REVERSE POWER DISSIPATION:PR (W) 0.003 0.002 0.001 D=1/2 DC Sin(θ=180) 0 0 0.1 0.2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Rev.B 2/3 Diodes AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0.25 0.2 DC 0.15 D=1/2 0.1 0A Io 0V t VR D=t/T VR=15V T Tj=125℃ 0.05 Sin(θ=180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 0.3 0A 0.25 0V 0.2 DC 0.15 D=1/2 0.1 Sin(θ=180) 0.05 Io VR t D=t/T VR=15V T Tj=125℃ 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) RB500V-40 Rev.B 3/3 Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅣ CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to .


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