Data Sheet
Schottky Barrier Diode
RB495D
Applications General rectification.
Dimensions (Unit : mm)
Land size fi...
Data Sheet
Schottky Barrier Diode
RB495D
Applications General rectification.
Dimensions (Unit : mm)
Land size figure (Unit : mm) 1.9
0. 3~0.6
1.0MIN. 2.4
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability
Construction Silicon epitaxial planar
2.8±0. 2
1.6-+00..
2 1
2.9±0.2 0.4 +-00..105 Eaリchーleドaとd もhas same dimension
(3)
+0.1 0 .15 -0.06
0.95
(2)
0.95
0.95
1.9±0.2
(1)
0~ 0.1
0 .8±0 .1 1. 1±0. 2
0. 01
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59
week code
0.8MIN. SMD3 Structure
Taping specifications (Unit : mm)
4 .0± 0.1
2 .0±0 .05
φ1.5 ±0.1 0
0.3±0.1
1.75±0.1
3.2±0.1 5.5±0.2
3.5±0.05 8.0±0.2
3.2±0.1
0~0.5
3.2±0.1
4 .0±0 .1
φ 1.0 5MI N
1.35±0.1
Absolute maximum ratings (Ta=25°C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature
(*1) Rating of per diode : lo/2
Symbol VRM VR Io IFSM Tj
Tstg
Limits
40 25 0.4 2 125 40 to 125
Unit V V mA A °C °C
Electrical characteristics (Ta=25°C) Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max. VF1 - - 0.30 VF2 - - 0.50 IR1 - - 70
Unit Conditions
V IF=10mA V IF=200mA μA VR=25V
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1/3
2011.05 - Rev.B
RB495D
Data Sheet
FORWARD CURRENT:IF(A)
FORWARD VOLTAGE:VF(mV)
1 Ta=75℃
Ta=125℃ 0.1
0.01
Ta=25℃ Ta=-25℃
REVERSE CURRENT:IR(uA)
100000 10000 1000 100 10 1
Ta=125℃ Ta=...