RB481K

Schottky Barrier Diode RB481K / RB481KFH Datasheet Application Low current rectification Features 1) Ultra small mold type. (UMD4) 2) Low VF 3) High reliability Construction Silicon epitaxial planar Dimensions (Unit : mm) 2.0±0.2 0 .2 5 ± 0.1 0.05 Eacリhーleaドdとhaもs same dimension (3) (2) 0.15±0.05 　Land size figure (Unit : mm) 0.6 1.25±0.1 2.1±0.1 0.1Min 0.9MIN 1.6 (4) 0.65 0.65 1.3±0.1 (1) 0～0.1 UMD4 0.7 0.9±0.1 Structure ROHM : UMD4 JEDEC : SOT-343 JEITA : SC-82 dot (year week factory) 1Pin Mark Taping specifications (Unit : mm) 4.0± 0.1 2.0± 0.05 φ 1.55± 0.05 1.3 0.3± 0.1 1.75± 0.1 8.0± 0.2 3.5± 0.05 2.4± 0.1 2.4± 0.1 2.45± 0.1 5.5± 0.2 0 0.5 2.2± 0.1 4.0± 0.1 φ 1.1± 0.1 1.15± 0.1 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) VRM VR Average rectified forward current (*1) Io Forward current surge peak (60Hz・1cyc) (*1) Junction temperature IFSM Tj Storage temperature Tstg (*1) Rating of per diode Limits 30 30 200 1 125 40 to 125 Unit V V mA A °C °C Electrical characteristics (Ta= 25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit Conditions VF1 - - 0.28 V IF=10mA VF2 - - 0.33 V IF=100mA VF3 - - 0.43 V IF=100mA VF4 - - 0.50 V IF=100mA IR - - 30 A VR=10V www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 2012.12 - Rev.D RB481K / RB481KFH 　 Data Sheet FORWARD CURRENT : IF(mA) CAPACITANCE BETWEEN TERMINALS :...