Data Sheet
Schottky Barrier Diode
RB425D
Applications Low power rectification
Dimensions (Unit : mm)
Land size f...
Data Sheet
Schottky Barrier Diode
RB425D
Applications Low power rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm) 1.9
0.3~0.6
1.0MIN. 2.4
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
Construction Silicon epitaxial planer
2.9±0.2 0.4 +-00..105 Eaリchーleドaとd もhas same dimension
(3)
+0.1 0 .15 -0.06
0.95
2 .8 ±0 .2 1 .6-+00 ..12
(2)
0.95
0.95
1.9±0.2
(1)
0~ 0.1
0 .8±0 .1 1. 1±0. 2
0. 01
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59
week code
Taping specifications (Unit : mm)
4.0±0 .1
2.0±0.05
φ1 .5± 0.1 0
0.8MIN. SMD3
Structure
0.3±0.1
1.75±0.1
3.2±0.1 5.5±0.2
3.5±0.05 8.0±0.2
3.2±0.1
0~0.5
3 .2±0 .1
Absolute maximum ratings (Ta=25°C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature
(*1) Rating of per diode:Io/2
Symbol VRM VR Io IFSM Tj
Tstg
4.0±0.1
φ1.05MIN
Limits
40 40 100 1 125 40 to 125
Unit V V mA A °C °C
1.35±0.1
Electrical characteristics (Ta=25°C) Parameter
Forward voltage
Reverse current Capacitance between terminals
Symbol Min. Typ. Max. VF1 - - 0.55 VF2 - - 0.34 IR1 - - 30
Ct1 - 6 -
Unit Conditions
V IF=100mA V IF=10mA μA VR=10V pF VR=10V , f=1MHz
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1/3
2011.04 - Rev.B
RB425D
Data Sheet
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
100 Ta=125℃
10 Ta=75℃
1
0.1
Ta=25℃ Ta=-25℃
0.01 0
...