Data Sheet
Schottky Barrier Diode
RB411D
Applications Low current rectification
Dimensions (Unit : mm)
Land size...
Data Sheet
Schottky Barrier Diode
RB411D
Applications Low current rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm) 1.9
0. 3~0.6
1.0MIN. 2.4
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
Construction Silicon epitaxial planer
2.9±0.2 リードとも
0.4 +-00..105 Each lead has same dimension
(3)
+0.1 0 .15 -0.06
0.95
2 1
1.6-+00..
2.8±0. 2
(2)
0.95
0.95
1.9±0.2
0.8MIN.
0~ 0.1
SMD3
(1)
0 .8±0 .1
1. 1±0. 2 0. 01
Structure
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59
week code
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1 .5±0.1 0
0 .3±0.1
1.75±0.1
3.2±0.1 5.5±0.2
3.5±0.05 8.0±0.2
3.2±0.1
0~0.5
3.2 ±0.1
4 .0±0.1
φ1.05MIN
1.35±0.1
Absolute maximum ratings (Ta=25°C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature
(*1) Rating of per diode
Symbol VRM VR Io IFSM Tj Tstg
Limits 40 20 500 3 125
40 to 125
Unit V V mA A °C °C
Electrical characteristics (Ta=25°C) Parameter
Forward voltage
Reverse current Capacitance between terminals
Symbol Min. Typ. Max. VF1 - - 0.50 VF2 - - 0.30 IR1 - - 30 Ct1 - 20 -
Unit Conditions
V IF=500mA V IF=10mA μA VR=10V pF VR=10V , f=1MHz
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1/3
2011.04 - Rev.B
RB411D
Data Sheet
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
1000 100
Ta=25℃ Ta=75℃
Ta=125℃
10
Ta=-25℃
1
0.1...