RB160L-40
Diodes
Schottky barrier diode
RB160L–40
zApplications High frequency rectification For switching power supply...
RB160L-40
Diodes
Schottky barrier diode
RB160L–40
zApplications High frequency rectification For switching power supply. zExternal dimensions (Units : mm)
1.5±0.2 CATHODE MARK
1.2±0.3 4.5±0.2
zFeatures 1) Compact power mold type (PMDS) 2) Low IR. (IR=5mA Typ.) 3) High reliability
3
4
0.1 +0.02 −0.1
2.6±0.2
2.0±0.2
zConstruction Silicon epitaxial Planar
ROHM : PMDS EIAJ : − JEDEC : SOD-106
,
···· Date of manufacture EX. 1999. 12 →9, C
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current ∗ Peak forward surge current Junction temperature Storage temperature
∗When mounted on a PCBs board
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 40 1 70 125 −40~+125
Unit V V A A °C °C
zElectrical characteristics (Ta = 25°C)
Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.55 0.1 Unit V mA IF = 1.0A VR = 40V Conditions
5.0±0.3
RB160L-40
Diodes
zElectrical characteristic curves (Ta = 25°C)
CAPACITANCE BETWEEN TERMINALS : CT (F)
10
10m
125°C
10n f = 1MHz
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
1m
1
100°C 75°C 50°C
100µ
1n
100m
10µ
25°C
10m
125 °C 75°C 25 ° C
100p
1µ
1m 0
0.2
0.4
0.6
0.8
1.0
100n 0
10
20
30
40
50
60
10p 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF(V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristics
1.2
FORWARD POWE...