RB050LA-40

RB050LA-40 Diodes Shottky barrier diode RB050LA-40 !Application General rectification. !External dimensions (Unit : mm) 1.5±0.2 CATHODE MARK 0.1±0.12 0.0 !Features 1) Small and Thin power mold type (PMDT). 2) Mold type. 3) High reliability. 4) Low VF. ROHM : EIAJ : − JEDEC : 3.8±0.2 2.6±0.1 0.95±0.1 !Structure Silicon Epitaxial Planer !Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz / 1cyc.) Junction temperature Storage temperature ∗On the Glass epoxy substrate, Tc=90°C MAX. Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 3.0 70 150 −40 to 150 Unit V V A A °C °C ∗ !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. − − − Max. 0.50 0.55 100 Unit V V µA Conditions IF=1.5A IF=3.0A VR=40V 4.7±0.3 35 1/2 RB050LA-40 Diodes !Electrical characteristic curves (Ta=25°C) 10000 10000 1000 Ta=125°C FORWARD CURRENT : IF (mA) 1000 REVERSE CURRENT : IR (µA) Ta=125°C Ta=75°C Ta=25°C 1000 Ta=75°C TERMINAL CAPACITANCE : CT (pF) f=1MHz Ta=25°C 100 100 100 10 10 Ta=25°C 1 0 100 200 300 400 500 1 0 10 20 30 40 10 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF (mV) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward Temperature Characteristics Fig.2 Reverse Temperature Characteristics Fig.3 Capacitance Between Terminals Characteristics AVERAGE RECTIFIED FOWARD CU...