RFP70N03, RF1S70N03, RF1S70N03SM
Data Sheet
January 2002
70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs
These N-Channel...
RFP70N03, RF1S70N03, RF1S70N03SM
Data Sheet
January 2002
70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA49025.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03
TO-262AA
F1S70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN GATE
Features
70A, 30V
rDS(ON) = 0.010Ω Temperature Compensating PSPICE® Model
Peak Current vs Pulse Width Curve
UIS Rating Curve (Single Pulse) 175oC Operating Temperature
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G S
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
JEDEC TO-262AA
DRAIN (FLANGE)
SOURCE DRAIN GATE
©2002 Fairchild Semiconductor Corporation
RFP70N03, RF1S70N03, RF1S70N03SM Rev. C
RFP70N03, RF1S70N03, RF1S70N03SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
UNITS
Drain ...