RF1S70N03

RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49025. Ordering Information PART NUMBER PACKAGE BRAND RFP70N03 TO-220AB RFP70N03 RF1S70N03 TO-262AA F1S70N03 RF1S70N03SM TO-263AB F1S70N03 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE Features 70A, 30V rDS(ON) = 0.010Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve (Single Pulse) 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) JEDEC TO-262AA DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation RFP70N03, RF1S70N03, RF1S70N03SM Rev. C RFP70N03, RF1S70N03, RF1S70N03SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS Drain ...