RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
These N-Channel po...
RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits. Formerly developmental type TA49018.
Features
50A, 60V rDS(ON) = 0.022Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature
Symbol
D
Ordering Information
PART NUMBER RFG50N06 RFP50N06 RF1S50N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG50N06 RFP50N06 F1S50N06
S G
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFG50N06, RFP50N06, RF1S50N06SM Rev. B
RFG50N06, RFP50N06, RF1S50N06SM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFG50N06, RFP50N06 RF1S50N06SM 60 60 ±20 50 (Figure 5) (Figure 6) 131 0.877 -55 to 175 300 260 UNITS V V V A
Drain to Source Voltage ...