RHU002N06

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 zFeatures 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. zExternal dimensions (Unit : mm) (1) 0.65 0.65 0.3 (3) 1.25 2.1 0.15 0.2 (2) 0.1Min. zStructure Silicon N-channel MOSFET transistor 0~0.1 Each lead has same dimensions Abbreviated symbol : KP ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 0.7 0.9 1.3 2.0 (1) Source (2) Gate (3) Drain zEquivalent circuit (3) (2) ∗Gate Protection Diode. (1) (1) Source (2) Gate (3) Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current Pulsed Symbol VDSS VGSS ID IDP IS ISP ∗1 PD Tch Tstg ∗2 ∗1 Limits 60 ±20 200 800 200 800 200 150 −55 to +150 Unit V V mA mA mA mA mW ˚C ˚C Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended 1/4 RHU002N06 Transistors zElectrical characteristics (Ta=25°C) Parameter Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Symbol IGSS V (BR) DSS IDSS VGS (th) Min. − 60 − 1 − − 100 − − − − − − − − − − Typ. − − − − 1.7 2.8 − 15 ...