Document
RHRP640CC, RHRP650CC, RHRP660CC
January 1998 File Number 4464
6A, 400V - 600V Hyperfast Dual Diodes
RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics (t rr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted hepaticas planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49057.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated • Planar Construction • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Applications
• Switching Power Supplies
BRAND RHRP640C RHRP650C RHRP660C
Ordering Information
PART NUMBER RHRP640CC RHRP650CC RHRP660CC PACKAGE TO-220AB TO-220AB TO-220AB
• Power Switching Circuits • General Purpose
Symbol
K
NOTE: When ordering, use the entire part number.
A1
A2
Package
JEDEC TO-220AB
ANODE 2 CATHODE ANODE 1
CATHODE (FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
RHRP640CC, RHRP650CC, RHRP660CC
Absolute Maximum Ratings
(Per Leg) TC = 25oC, Unless Otherwise Specified RHRP640CC 400 400 400 6 12 60 50 10 -65 to 175 300 260 RHRP650CC 500 500 500 6 12 60 50 10 -65 to 175 300 260 RHRP660CC 600 600 600 6 12 60 50 10 -65 to 175 300 260 UNITS V V V A A A W mJ oC
oC oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) TC = 152oC Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Square Wave, 20kHz Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 phase, 60Hz Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .TSTG,TJ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
(Per Leg) TC = 25oC, Unless Otherwise Specified RHRP640CC RHRP650CC MAX 2.1 1.7 100 500 30 35 3 MIN TYP 16 8.5 45 20 MAX 2.1 1.7 100 500 30 35 3 MIN RHRP660CC TYP 16 8.5 45 20 MAX 2.1 1.7 100 500 30 35 3 UNITS V V µA µA µA µA µA µA ns ns ns ns nC pF
oC/W
SYMBOL VF
TEST CONDITION IF = 6A IF = 6A, TC = 150oC
MIN -
TYP 16 8.5 45 20 -
IR
VR = 400V VR = 500V VR = 600V VR = 400V, TC = 150oC VR = 500V, TC = 150oC VR = 600V, TC = 150oC
trr
IF = 1A, dIF/dt = 200A/µs IF = 6A, dIF/dt = 200A/µs
ta tb QRR CJ RθJC DEFINITIONS
IF = 6A, dIF/dt = 200A/µs IF = 6A, dIF/dt = 200A/µs IF = 6A, dIF/dt = 200A/µs VR = 10V, IF = 0A
VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle.
2
RHRP640CC, RHRP650CC, RHRP660CC Typical Performance Curves
30 1000 175oC IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 100 100oC
10
10
1
175oC 1.0 0.5 0 0.5
100oC
25oC
0.1
25oC
1.0
1.5
2.0
2.5
3.0
0.01 0
100
200
300
400
500
600
VF, FORWARD VOLTAGE (V)
VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
30 25 t, RECOVERY TIMES (ns)
TC = 25oC, dIF/dt = 200A/µs
50
TC = 100oC, dIF/dt = 200A/µs
t, RECOVERY TIMES (ns)
40 trr 30
20 15 10
trr
ta
20
ta tb
tb.