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RH1014M Dataheets PDF



Part Number RH1014M
Manufacturers Linear Technology
Logo Linear Technology
Description Quad Precision Operational Amplifier
Datasheet RH1014M DatasheetRH1014M Datasheet (PDF)

RH1014M Quad Precision Operational Amplifier DESCRIPTIO ABSOLUTE AXI U RATI GS The RH1014M is the first precision quad operational amplifier which directly upgrades designs in the industry standard 8-pin DIP LM124/LM148/OP-11/5156 pin configuration. Low offset voltage (300µV max), low drift ( 2.5µV/°C), low offset current ( 1.5nA), and high gain (1.2 million min) combine to make the RH1014M four truly precision amplifers in one package. The wafer lots are processed to Linear Technology’s inh.

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RH1014M Quad Precision Operational Amplifier DESCRIPTIO ABSOLUTE AXI U RATI GS The RH1014M is the first precision quad operational amplifier which directly upgrades designs in the industry standard 8-pin DIP LM124/LM148/OP-11/5156 pin configuration. Low offset voltage (300µV max), low drift ( 2.5µV/°C), low offset current ( 1.5nA), and high gain (1.2 million min) combine to make the RH1014M four truly precision amplifers in one package. The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent military applications. Supply Voltage ..................................................... ± 22V Differential Input Voltage ...................................... ±30V Input Voltage .............. Equal to Positive Supply Voltage ................................. 5V Below Negative Supply Voltage Output Short-Circuit Duration ......................... Indefinite Operating Temperature Range .............. – 55°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C , LTC and LT are registered trademarks of Linear Technology Corporation. BUR -I CIRCUIT U W U PACKAGE I FOR ATIO TOP VIEW OUT A –IN A 1 2 3 4 5 6 7 14 OUT D 13 –IN D 12 +IN D 11 V – 10 +IN C 9 8 –IN C OUT C 50k 20V +IN A V+ +IN B –IN B 100Ω RH1014M OUT B 50k –20V RH1014M BI J PACKAGE 14-LEAD CERAMIC DIP TOP VIEW OUT A –IN A +IN A V+ +IN B –IN B OUT B 1 2 3 4 5 6 7 14 13 12 11 10 9 8 OUT D –IN D +IN D V+ +IN C –IN C OUT C WB PACKAGE 14-LEAD FLATPAK METAL SEALED BOTTOM BRAZED U W W W U U U 1 RH1014M TABLE 1: ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage 2 VCM = 0.1V V OS Temp V OS Time IOS IB en Average Tempco of Offset Voltage Long Term VOS Stability Input Offset Current 2 Input Bias Current 2 Input Noise Voltage Input Noise Voltage Density in RIN AVOL Input Noise Current Density Input Resistance Large-Signal Voltage Gain 0.1Hz to 10Hz fO = 10Hz fO = 1000Hz fO = 10Hz Differential Common Mode VO = ±10V, RL 2k VO = ±10V, RL 600 VO = 5mV to 4V, RL = 500 Input Voltage Range 2 1 1 1,2 1,2 CMRR PSRR Common-Mode Rejection Ratio Power Supply Rejection Ratio Channel Separation VOUT Output Voltage Swing VCM = 13.5V, –15V VCM = 13V, –14.9V VS = ± 2V to ±18V VO = ±10V, RL = 2k RL 2k Output Low, No Load Output Low, 600 to GND Output Low, ISINK = 1mA Output High, No Load Output High, 600 to GND SR IS Slew Rate Supply Current Per Amplifier 2 2 2 2 2 2 4.0 3.4 0.2 100 120 ±12.5 13.5 –15.0 3.5 0 97 1.2 0.5 1 1 70 4 2 1 CONDITIONS NOTES MIN (Pre-Irradiation) SUB- – 55°C T A 125°C GROUP MIN TYP MAX 1 1 750 2.5 2 550 TA = 25°C TYP MAX 300 450 SUBGROUP 2,3 UNITS µV µV µV µV/°C µV/Mo 0.5 10 10 30 50 0.55 24 22 0.07 1 1 1 1 20 20 45 120 2,3 2,3 2,3 2,3 nA nA nA nA µVP-P nV/ Hz nV/ Hz pA/ Hz M G 4 4 0.25 5,6 V/µV V/µV V/µV V V V V 1 94 1 1 4 25 10 350 4 4 4 4 4 4 0.55 0.50 1 1 0.70 0.65 2,3 2,3 3.1 5,6 18 5,6 ±11.5 5,6 97 2,3 2,3 dB dB dB dB V mV mV mV V V V/µs mA mA 2 RH1014M TABLE 1A: ELECTRICAL CHARACTERISTICS VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage 2 IOS Input Offset Current 2 IB Input Bias Current 2 Input Voltage Range 1 1 2 2 CMRR PSRR AVOL VOUT Common-Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Maximum Output Voltage Swing VCM = 13V, – 15V VS = ±10V to ±18V RL 10k, V O = ±10V RL 10k Output Low, No Load Output Low, 600 to GND Output Low, ISINK = 1mA Output High, No Load Output High, 600 to GND SR IS Slew Rate Supply Current RL 10k Per Amplifier 2 2 2 2 2 2 4.0 3.4 0.13 0.55 0.50 13.5 –15.0 3.5 0 97 100 500 ±12.5 25 10 0.6 4.0 3.2 0.12 0.55 0.50 CONDITIONS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX 450 600 10 10 60 80 13.5 –15.0 3.5 0 97 98 200 ±12.5 30 10 0.8 4.0 3.0 0.11 0.55 0.50 450 600 10 10 75 100 13.5 – 15.0 3.5 0 94 94 100 ±12.5 40 10 1.0 4.0 2.8 0.07 0.55 0.50 0.01 0.55 600 750 15 15 100 125 13.5 –15.0 3.5 0 90 86 50 ±12.5 50 10 1.6 86 80 25 ±12.5 100KRAD(Si) MIN MAX 750 900 20 20 175 200 13.5 –15.0 250 25 200KRAD(Si) MIN MAX UNITS 900 µV µV nA nA nA nA V V V V dB dB V/mV V mV mV V V V V/µs mA mA (Post-Irradiation) (Note 3) Note 1: Guaranteed by design, characterization, or correlation to other tested parameters.. Note 2: Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, VOUT = 1.4V. 3 RH1014M TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group B and D for Class S, and Group C and D for Class B End Point Electrical Parameters (Method 5005) * PDA applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3,4,5,6 1,2,3,4,5,6 1,2,3 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The .


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