RFD8P06LE, RFD8P06LESM, RFP8P06LE
July 1999 File Number 4273.1
8A, 60V, 0.300 Ohm, ESD Rated, Logic
Level, P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49203.
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e.,
• 8A, 60V
• rDS(ON) = 0.300Ω
• 2kV ESD Protected
• Temperature Compensating PSPICE® Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
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