RFP50N05

RFG50N05, RFP50N05 Data Sheet July 1999 File Number 2873.3 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772. Features 50A, 50V rDS(ON) = 0.022Ω UIS Rating Curve (Single Pulse) 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFG50N05 RFP50N05 PACKAGE TO-247 TO-220AB BRAND RFG50N05 RFP50N05 G S NOTE: When ordering, include the entire part number. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-462 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFG50N05, RFP50N05 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG50N05, RFP50N05 50 50 50 120 ±20 132 0.88 Refer to UIS SOA Curve -55 to 175 300 260 UNITS V V A A V W W/ oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . ....