RFP30N06LE

RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 3629.2 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49027. Features 30A, 60V rDS(ON) = 0.047Ω 2kV ESD Protected Temperature Compensating PSPICE™ Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP3 0N06L E, RF1S3 0N06L ESM) /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- Symbol D Ordering Information PART NUMBER RFP30N06LE RF1S30N06LESM PACKAGE TO-220AB TO-263AB BRAND F30N06LE 1S30N06L G NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) GAT...