RFP2P08

RFP2P08, RFP2P10 Semiconductor Data Sheet October 1998 File Number 2870.1 -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate Features -2A, -80V and -100V rDS(ON) = 3.500Ω [ /Title power field effect transistors designed for applications such Related Literature (RFP2P as switching regulators, switching converters. motor drivers, - TB334 “Guidelines for Soldering Surface Mount relay drivers, and drivers for high power bipolar switching 08, Components to PC Boards RFP2P transistors requiring high speed and low gate drive power. These types can be operated directly from integrated Symbol 10) circuits. /SubFormerly developmental type TA_____. D ject (2A, Ordering Information 80V G PART NUMBER PACKAGE BRAND and RFP2P08 TO-220AB RFP2P08 100V, S RFP2P10 TO-220AB RFP2P10 3.500 NOTE: When ordering, use entire part number. Ohm, P-Channel Packaging Power TO-220AB MOSSOURCE FETs) DRAIN GATE /Author () DRAIN (FLANGE) /Keywords (Harris Semiconductor, P-Channel Power MOSFETs, TO220AB) /Creator () /DOCI NFO pdf- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFP2P08, RFP2P10 RFP2P08 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . ....