RFP15N05

RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA0522. Features 15A, 50V and 60V rDS(ON) = 0.140Ω Design Optimized for 5V Gate Drives Can be Driven from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics Ordering Information PART NUMBER RFP15N05L RFP15N06L NOTE: PACKAGE TO-220AB TO-220AB BRAND RFP15N05L RFP15N06L High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB DRAIN (TAB) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B RFP15N05L, RFP15N06L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP15N05L 50 50 15 40 ±10 60 0.48 -55 to 150 300 260 RFP15N06L 60 60 15 40 ±10 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . ...