RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet July 1999 File Number
3515.2
10A, 30V, 0.200 Ohm, Logic Level, P-Channel P...
RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet July 1999 File Number
3515.2
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits. Formerly developmental type TA49205.
Features
10A, 30V rDS(ON) = 0.200Ω Temperature Compensating PSPICE® Model PSPICE Thermal Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature
Symbol
D
Ordering Information
PART NUMBER RFD10P03L RFD10P03LSM RFP10P03L PACKAGE TO-251AA TO-252AA TO-220AB BRAND 10P03L 10P03L F10P03L
G
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..
Packaging
JEDEC TO-251AA JEDEC TO-252AA
DRAIN (FLANGE)
SOURCE DRAIN GATE GATE SOURCE
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
7-3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFD10P03L, RFD10P03LSM, ...