RFM7N40

Semiconductor RFM7N35, RFM7N40, RFP7N35, RFP7N40 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17424. July 1998 Features 7A, 350V and 400V rDS(ON) = 0.75Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFM7N35 RFM7N40 RFP7N35 RFP7N40 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB BRAND RFM7N35 RFM7N40 RFP7N35 RFP7N40 S G NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) DRAIN (TAB) JEDEC TO-220AB SOURCE DRAIN GATE SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1536.2 5-1 RFM7N35, RFM7N40, RFP7N35, RFP7N40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM7N35 350 350 7 15 ±20 100 0.8 -55 to 150 300 260 RFM7N40 400 400 7 15 ±20 100 0.8 ...