RFM3N50

RFM3N45, RFM3N50, RFP3N45, RFP3N50 Semiconductor Data Sheet October 1998 File Number 1384.2 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. Features 3A, 450V and 500V rDS(ON) = 3Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title () /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark Symbol D Ordering Information PART NUMBER RFM3N45 RFM3N50 RFP3N45 RFP3N50 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB BRAND RFM3N45 RFM3N50 RFP3N45 RFP3N50 G S NOTE: When ordering, use the entire part number. [ /PageMode /UseOutlines /DOCVIEW pdfmark Packaging JEDEC TO-204AA DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM3N45 450 450 3 5 ±20 75 0.6 -55 to 150 300 260 RFM3N50 500 500 3 5 ±20 75 0.6 -55 to 150 300 260 RFP3N45...