RFM10N50

Semiconductor RFM10N45, RFM10N50 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. September 1998 Features 10A, 450V and 500V rDS(ON) = 0.600Ω [ /Title (RFM10 N45, RFM10 N50) /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFM10N45 RFM10N50 PACKAGE TO-204AA TO-204AA BRAND RFM10N45 RFM10N50 NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) [ /PageMode CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1788.1 5-1 RFM10N45, RFM10N50 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM10N45 450 450 10 20 ±20 150 1.2 -55 to 150 260 RFM10N50 500 500 10 20 ±20 150 1.2 -55 to 150 260 UNITS V V A A V W W/oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . ....