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RFL4N15 Dataheets PDF



Part Number RFL4N15
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
Datasheet RFL4N15 DatasheetRFL4N15 Datasheet (PDF)

Semiconductor RFL4N12, RFL4N15 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9192. September 1.

  RFL4N15   RFL4N15


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Semiconductor RFL4N12, RFL4N15 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9192. September 1998 Features • 4A, 120V and 150V • rDS(ON) = 0.400Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device [ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFL4N12 RFL4N15 PACKAGE TO-205AF TO-205AF BRAND RFL4N12 RFL4N15 Symbol D G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1462.2 5-1 RFL4N12, RFL4N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL4N12 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 120 120 4 15 ±20 8.33 0.0667 -55 to 150 260 RFL4N15 150 150 4 15 ±20 8.33 0.0667 -55 to 150 260 UNITS V V A A V W W/oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250µA, VGS = 0V 120 150 VGS(TH) IDSS VGS = VDS , ID = 250µA (Figure 8) VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS , TC = 125oC 2 VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) 40 165 90 90 4 1 25 ±100 1.6 0.400 60 250 135 135 850 230 100 15 V V V µA µA nA V Ω ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFL4N12 RFL4N15 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RθJC VGS = ±20V, VDS = 0V ID = 4A, VGS = 10V ID = 4A, VGS = 10V (Figures 6, 7) VDD = 75V, ID ≈ 2A, RG = 50Ω, VGS = 10V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTE: 2. Pulse Test: pulse duration ≤ 300µs max, duty cycle ≤ 2%. SYMBOL VSD trr ISD = 2A ISD = 2A, dISD/dt = 100A/µs 200 TEST CONDITIONS MIN TYP MAX 1.4 UNITS V ns 5-2 RFL4N12, RFL4N15 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 50 100 150 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 Unless Otherwise Specified 4.5 4.0 0.8 0.6 0.4 0.2 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TC = 25oC TJ = MAX RATED ID , DRAIN CURRENT (A) DC 20 PULSE DURATION = 250µs TC = 25oC VGS = 20V VGS = 10V VGS = 7V VGS = 8V ID , DRAIN CURRENT (A) 15 1 OP ER AT IO N 10 VGS = 6V 5 VGS = 5V VGS = 4V OPERATION IN THIS AREA LIMITED BY rDS(ON) 0.1 RFL4N12 RFL4N15 0.01 1 100 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 1000 0 0 1 2 3 4 5 6 7 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 9 10 FIGURE 3. .


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