RFL2N06L
Data Sheet October 1999 File Number 1560.3
2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET
The RFL2N06...
RFL2N06L
Data Sheet October 1999 File Number 1560.3
2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET
The RFL2N06L N-channel enhancement mode silicon gate power field effect
transistor is designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9520.
Features
2A, 50V and 60V rDS(ON) = 0.950Ω Design Optimized for 5V Gate Drives Can be Driven from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics
Ordering Information
PART NUMBER RFL2N06L PACKAGE TO-205AF BRAND RFL2N06L
High Input Impedance Majority Carrier Device
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFL2N06L
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFL2N06L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . ...