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RFL1N18

Intersil Corporation

1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs


Description
Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high spee...



Intersil Corporation

RFL1N18

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