1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs
Description
Semiconductor
RFL1N18, RFL1N20
1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high spee...