RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
Description
This is an N-Channel enhan...
RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power field effect
transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09524.
Features
1A, 100V rDS(ON) = 1.200Ω
Ordering Information
PART NUMBER RFL1N10L PACKAGE TO-205AF BRAND RFL1N10L
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN (CASE) GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
File Number
1510.3
1
RFL1N10L
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFL1N10L 100 100 1 5 ±10 8.33 0.0667 -55 to 150 260 UNITS V V A A V W W/oC oC
oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....