1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs
Description
Semiconductor
RFL1N08, RFL1N10
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Description
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high spe...