RFH12N40

RFH12N35, RFH12N40 Data Sheet October 1998 File Number 1630.2 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17434. Features 12A, 350V and 400V rDS(ON) = 0.380Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFH12N35 RFH12N40 PACKAGE TO-218AC TO-218AC BRAND RFH12N35 RFH12N40 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-218AC SOURCE DRAIN GATE DRAIN 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFH12N35, RFH12N40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH12N35 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drai...