RFG60P06E

RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA09836. Features 60A, 60V rDS(ON) = 0.030Ω Temperature Compensating PSPICE® Model 2kV ESD Rated Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature Symbol D Ordering Information PART NUMBER RFG60P06E PACKAGE TO-247 BRAND RFG60P06E G NOTE: When ordering use the entire part numberr RFG60P06E. S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) ©2002 Fairchild Semiconductor Corporation RFG60P06E Rev. B RFG60P06E Absolute Maximum Ratings TC = 25oC RFG60P06E -60 -60 ±±20 60 Refer to Peak Current Curve Refer to UIS Curve 2 215 1.43 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . ....