RFD8P06LESM

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49203. Features 8A, 60V rDS(ON) = 0.300Ω 2kV ESD Protected Temperature Compensating PSPICE® Model PSPICE Thermal Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Ordering Information PART NUMBER RFD8P06LE RFD8P06LESM RFP8P06LE PACKAGE TO-251AA TO-252AA TO-220AB BRAND F8P6LE F8P6LE FP8P06LE Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD8P06LESM9A. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 7-11 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporati...