RFD7N10LE

RFD7N10LE, RFD7N10LESM Data Sheet October 1999 File Number 3598.3 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49046. Features 7A, 100V rDS(ON) = 0.300Ω Temperature Compensating PSPICE® Model Can be Driven Directly from CMOS, NMOS, TTL Circuits Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD7N10LE RFD7N10LESM PACKAGE TO-251AA TO-252AA 7N10L 7N10LE BRAND Symbol D G NOTE: When ordering, use the entire part number. Add suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD7N10LESM9A. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) 1 CAUTION: These dev...